Thin Layer Transfer Using Room Temperature Wafer-Level Bonding Process

This article deals with the transfer of a thin Si film (100nm) on top of a Si substrate using a room temperature covalent bonding. No annealing is performed post direct bonding. Before to detail this process, the equipment used for the bonding process is characterized in terms of particle and metal...

Full description

Saved in:
Bibliographic Details
Published inECS transactions Vol. 75; no. 9; pp. 203 - 211
Main Authors Abadie, Karine, Fournel, Frank, Morales, Christophe, Moriceau, Hubert, Wimplinger, Markus
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 24.08.2016
Online AccessGet full text

Cover

More Information
Summary:This article deals with the transfer of a thin Si film (100nm) on top of a Si substrate using a room temperature covalent bonding. No annealing is performed post direct bonding. Before to detail this process, the equipment used for the bonding process is characterized in terms of particle and metal contamination. The etching occurring during one of the sub process of the surface preparation is also studied. Characterizations performed after layer transfer are presented. They include C-SAM inspections, SP2-HAZE measurements and TEM.
ISSN:1938-5862
1938-6737
DOI:10.1149/07509.0203ecst