Interfacial and Electrical Characterization of HfO2-Gated MOSCs and MOSFETs by C-V and Gated-Diode Method

Metal-oxide-semiconductor capacitors (MOSCs) and Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium dioxide (HfO2) dielectrics were fabricated and investi-gated. The electrical and interfacial properties were characterized including C-V, IDS-VGS, the mean density of i...

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Bibliographic Details
Published inECS transactions Vol. 16; no. 5; pp. 131 - 138
Main Authors Chen, S. Y., Chen, H. W., Chen, C. H., Chiu, F. C., Liu, C. H., Hsieh, Z. Y., Huang, H. S., Hwang, H. L.
Format Journal Article
LanguageEnglish
Published 2009
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Summary:Metal-oxide-semiconductor capacitors (MOSCs) and Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium dioxide (HfO2) dielectrics were fabricated and investi-gated. The electrical and interfacial properties were characterized including C-V, IDS-VGS, the mean density of interface traps per unit area and energy (), energy of interface traps density distribution, interface traps density (Nit), density of near-interface oxide traps per unit area (NNIOT), effective capture cross-section area (σs), mi-nority carrier lifetime (τFIJ) and surface recombination velocity (so) were studied. Furthermore, a comparison with MOSFETs using conventional SiO2 as gate dielectrics was also made.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2981594