VUV-Stimulated MO CVD Processes of Copper Layer Deposition

• Published in: ECS transactions Vol. 25; no. 8; pp. 979 - 986
• Main Authors: Igumenov, Igor K., Kuchumov, Boris M., Kozlova, Svetlana, Koretskaya, Tat'yana P., Trubin, Sergey V., Sokuev, Roman, Lyakh, Vladimir, Kruchinin, Vladimir
• Format: Journal Article
• Language: English
• Published: 01.01.2009
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/1.3207695

VUV-stimulated processes of copper layer deposition were investigated. A conventional compound, copper bis-hexafluoroacetylacetonate, was used as a precursor. Excimer lamps emitting light within the wavelength range 116-172 nm were used as the sources of VUV radiation. The results of quantum-chemical calculations were compared with the electronic spectra of copper bis-hexafluoroacetylacetonate in the gas phase. Calculations were carried out using the quantum chemical method of the density functional theory with Slater type of atomic wave functions (DFT/TZP). On the basis of thus determined electronic structure, allowed dipole-dipole electron transitions within the wavelength region 100-1200 nm were calculated; they were compared with the experimental spectra. Investigation of copper deposition processes was carried out under variation of substrate temperature and precursor, process time, presence of reactant gas, spectral characteristics of the excimer lamps. The resulting layers were characterized by means of SEM, ESCA, ellipsometry.