Direct and Polymer Bonding of III-V to Processed Silicon-On-Insulator for Hybrid Silicon Evanescent Lasers Fabrication

We report the use of both direct and polymer bonding for the fabrication of Silicon/III-V evanescent laser. III-V structure is transferred to processed silicon-on-insulator (SOI) substrate at low temperature with a yield over 98%. We demonstrated the advantage of using a thick oxide layer (>100 n...

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Bibliographic Details
Published inECS transactions Vol. 33; no. 4; pp. 403 - 410
Main Authors Bordel, Damien, Argoud, Maxime, Augendre, Emmanuel, Harduin, Julie, Philippe, Paul, Olivier, Nicolas, Messaoudène, Sonia, Gilbert, Karen, Grosse, Philippe, Ben Bakir, Badhise, Fedeli, Jean-Marc
Format Journal Article
LanguageEnglish
Published 01.01.2010
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Summary:We report the use of both direct and polymer bonding for the fabrication of Silicon/III-V evanescent laser. III-V structure is transferred to processed silicon-on-insulator (SOI) substrate at low temperature with a yield over 98%. We demonstrated the advantage of using a thick oxide layer (>100 nm), allowed by the innovative design, for limiting the void formation at the bonding interface. Silicon/III-V evanescent laser have been realized. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side mode suppression ratio is as high as 20dB, and the fiber-coupled output power is ~7mW.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3483530