The effect of Zn/Sn Ratio on the Electrical Performance of Amorphous ZrZnSnO (ZZTO) Thin Film Transistors by RF Sputtering

Amorphous zirconium-zinc-tin-oxide (a-ZZTO) thin films and thin film transistors (TFTs) are investigated. The transmittance of the a-ZZTO is over 80% in the visible light wavelength region. The band gap, extracted from Tauc plot, is around 3.8 eV. The as-fabricated Zr0.03Zn0.32Sn0.65O TFT exhibits a...

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Bibliographic Details
Published inECS transactions Vol. 50; no. 8; pp. 185 - 189
Main Authors Chiu, I-Chung, Cheng, I-Chun, Chen, Jian Zhang
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 15.03.2013
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Summary:Amorphous zirconium-zinc-tin-oxide (a-ZZTO) thin films and thin film transistors (TFTs) are investigated. The transmittance of the a-ZZTO is over 80% in the visible light wavelength region. The band gap, extracted from Tauc plot, is around 3.8 eV. The as-fabricated Zr0.03Zn0.32Sn0.65O TFT exhibits a threshold voltage of 2.8 V, field-effect mobility of 10.25 cm2/V-s, a sub-threshold swing of 800 mV/dec and an on/off ratio of 105. As the Zn/Sn ratio increases, the threshold voltage increases and the field-effect mobility decreases.
ISSN:1938-5862
1938-6737
DOI:10.1149/05008.0185ecst