Electrical Properties Measurement for Interface Research in Silicon Bonding

Bonding process is evaluated by the study of the bonding interface in this paper. Electrical properties measurement is employed for the interface investigation. Distribution of both silicon and oxygen atoms is detected. The resistance of the measurement structure silicon-insulator-silicon (SIS) is o...

Full description

Saved in:
Bibliographic Details
Published inECS transactions Vol. 25; no. 33; pp. 203 - 213
Main Authors Miao, Gu-Jin, Zhang, Zhao-Hua, Ren, Tian-Ling, Zhou, Chang-Jian, Chen, Tao, Lin, Hui-Wang, Liu, Li-Tian
Format Journal Article
LanguageEnglish
Published 22.02.2010
Online AccessGet full text

Cover

More Information
Summary:Bonding process is evaluated by the study of the bonding interface in this paper. Electrical properties measurement is employed for the interface investigation. Distribution of both silicon and oxygen atoms is detected. The resistance of the measurement structure silicon-insulator-silicon (SIS) is obtained by I-V curves. The fixed charges that locate in the bonding interface are given quantitively from C-V curves. It is about 0.5-8.0×1012cm-2 in our samples. As a comparison, some traditional evaluations for bonding process are also presented, including tensile test to measure the bonding strength and IR image to detect the voids. Finally, by comparing the electrical characters and the mechanical performance, the relationship between them is demonstrated. It is found that total fixed charge density and bonding strength changes in the opposite direction.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3334809