Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor

NbN films were deposited via plasma-enabled ALD from (tBuN=)Nb(NEt2)3 and N2 plasma. A wide temperature process window (250-350°C) was demonstrated. Films had an atomic ratio of Nb:N0.9-0.95 and showed decreasing carbon contamination as the process temperature was increased.

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Bibliographic Details
Published inECS transactions Vol. 33; no. 2; pp. 177 - 182
Main Authors Deguns, Eric, Sowa, Mark J., Dalberth, Mark J., Bhatia, Ritwik, Kanjolia, Ravi, Moser, Dan, Sundaram, Ganesh M., Becker, Jill S.
Format Journal Article
LanguageEnglish
Published 01.01.2010
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Summary:NbN films were deposited via plasma-enabled ALD from (tBuN=)Nb(NEt2)3 and N2 plasma. A wide temperature process window (250-350°C) was demonstrated. Films had an atomic ratio of Nb:N0.9-0.95 and showed decreasing carbon contamination as the process temperature was increased.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3485254