Voltage-dependent Mobility Characterization of MDMO-PPV Thin-Film Transistors for Flexible Sensor Applications

We complement our previous published results on MDMO-PPV thin-film transistors by treating data according to different models that consider charge transport by hopping. Devices were processed on highly-doped silicon and ITO-covered glass substrates with dielectrics such as thermal SiO2 and PECVD dep...

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Bibliographic Details
Published inECS transactions Vol. 31; no. 1; pp. 425 - 432
Main Authors Cavallari, M. R., Albertin, Katia F., Santos, G., Ramos, C. A., Pereyra, Inés, Fonseca, F. J., Andrade, A. M.
Format Journal Article
LanguageEnglish
Published 01.01.2010
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Summary:We complement our previous published results on MDMO-PPV thin-film transistors by treating data according to different models that consider charge transport by hopping. Devices were processed on highly-doped silicon and ITO-covered glass substrates with dielectrics such as thermal SiO2 and PECVD deposited SiOxNy. Charge carrier mobility and threshold voltage on polymeric thinfilm transistors can be better estimated considering transport dependence on carrier density, Poole-Frenkel effect and interface states. Best results were achieved on HMDS-treated SiO2, but a completely new voltage-dependence is attained. These models can be employed for a better understanding of the polymeric semiconductor behavior when in a TFT-based sensor.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3474188