Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment

• Published in: ECS transactions Vol. 25; no. 8; pp. 1015 - 1022
• Main Authors: Dřínek, Vladislav, Fajgar, Radek, Klementová, Mariana, Subrt, Jan
• Format: Journal Article
• Language: English
• Published: 01.01.2009
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/1.3207700

Germanium Nanowires (GeNWs) were synthesized by Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 at temperature of 490 {degree sign}C and pressure of 90-100 Pa. GeNWs of several nanometers in diameter and a few microns in length were deposited onto various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Influence of surface pretreatment of the substrates (roughening of surface or Ge sputtering) is discussed in respect to the previously published theory of GeNW growth through the intermetallic alloy mechanism. The results conclude that another mechanism should be taken into account - the non-catalyst mechanism. Ge seeds necessary for triggering GeNW growth are formed by aggregation of Ge atoms/atom clusters/fragments which are stuck onto the substrate surface at the beginning of the process. The non-catalyst growth of GeNW triggered by such mechanism can be applied in growing GeNWs on semiconductors and insulators.