Preparation of high-quality AIN films by two-step method of radio frequency magnetron sputtering

The preparation of nanometer aluminum nitrogen （A1N） films with uniform lattice arrangement is of great significance for the manufacture of high-frequency surface acoustic wave （SAW） device. We put forward the two-step growth method and the annealing treatment method for the deposition of （100） A1N...

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Bibliographic Details
Published inOptoelectronics letters Vol. 9; no. 5; pp. 371 - 374
Main Author 朱宇清 陈希明 李福龙 李晓伟 杨保和
Format Journal Article
LanguageEnglish
Published Berlin/Heidelberg Springer Berlin Heidelberg 01.09.2013
Subjects
AIN薄膜
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
射频
氮化铝薄膜
溅射制备
磁控
表面声波
表面粗糙度
质量
Surface Acoustic Wave
Mean Free Path
Radio Frequency Magnetron
Nucleation Layer Growth
Nucleation Growth
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Summary:The preparation of nanometer aluminum nitrogen （A1N） films with uniform lattice arrangement is of great significance for the manufacture of high-frequency surface acoustic wave （SAW） device. We put forward the two-step growth method and the annealing treatment method for the deposition of （100） A1N thin films. The results show that when the sputtering pressure is 1.2 Pa and the ratio between N2 and Ar is 12：8, the influence of lattice thermal mismatch and anti-phase is the smallest during the nucleation growth at low-temperature stage of （100） A1N/（100） Si films. The root-mean-square （RMS） surface roughness of A1N prepared by the two-step method is reduced from 6.4 nm to 2.1 nm compared with that by common deposition process.
Bibliography:12-1370/TN
ZHU Yu-qing , CHEN Xi-ming , LI Fu-long , LI Xiao-wei, and YANG Bao-he
The preparation of nanometer aluminum nitrogen （A1N） films with uniform lattice arrangement is of great significance for the manufacture of high-frequency surface acoustic wave （SAW） device. We put forward the two-step growth method and the annealing treatment method for the deposition of （100） A1N thin films. The results show that when the sputtering pressure is 1.2 Pa and the ratio between N2 and Ar is 12：8, the influence of lattice thermal mismatch and anti-phase is the smallest during the nucleation growth at low-temperature stage of （100） A1N/（100） Si films. The root-mean-square （RMS） surface roughness of A1N prepared by the two-step method is reduced from 6.4 nm to 2.1 nm compared with that by common deposition process.
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-013-3115-2