张世林, 谢. 冯. 刘. 敦. 毛. (2013). DC Characteristics of Lattice-Matched InAlN/AlN/GaN High Electron Mobility Transistors. Transactions of Tianjin University, 19(1), 43-46. https://doi.org/10.1007/s12209-013-1920-0
Chicago Style (17th ed.) Citation张世林, 谢生 冯志红 刘波 敦少博 毛陆虹. "DC Characteristics of Lattice-Matched InAlN/AlN/GaN High Electron Mobility Transistors." Transactions of Tianjin University 19, no. 1 (2013): 43-46. https://doi.org/10.1007/s12209-013-1920-0.
MLA (9th ed.) Citation张世林, 谢生 冯志红 刘波 敦少博 毛陆虹. "DC Characteristics of Lattice-Matched InAlN/AlN/GaN High Electron Mobility Transistors." Transactions of Tianjin University, vol. 19, no. 1, 2013, pp. 43-46, https://doi.org/10.1007/s12209-013-1920-0.
Warning: These citations may not always be 100% accurate.