DC Characteristics of Lattice-Matched InAlN/AlN/GaN High Electron Mobility Transistors

Lattice-matched InAlN/AlN/GaN high electron mobility transistors （HEMTs） grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The expe...

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Bibliographic Details
Published inTransactions of Tianjin University Vol. 19; no. 1; pp. 43 - 46
Main Author 谢生 冯志红 刘波 敦少博 毛陆虹 张世林
Format Journal Article
LanguageEnglish
Published Heidelberg Tianjin University 01.02.2013
Subjects
AlN
Engineering
GaN
HEMT器件
Humanities and Social Sciences
Mechanical Engineering
multidisciplinary
Science
化学气相沉积
半导体特性分析系统
晶格匹配
直流特性
高电子迁移率晶体管
DC characteristic
thermal aging
metallorganic chemical vapor deposition
high electron mobility transistor
gallium nitride
indium aluminum nitride
sapphire
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ISSN1006-4982
1995-8196
DOI10.1007/s12209-013-1920-0

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Summary:Lattice-matched InAlN/AlN/GaN high electron mobility transistors （HEMTs） grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The experimental results indicated that a maximum drain current over 400 mA/mm and a peak external transconductance of 215 mS/mm can be achieved in the initial HEMTs. However, after the devices endured a 10-h thermal aging in furnace under nitrogen condition at 300 ℃, the maximum reduction of saturation drain current and external transconductance at high gate-source voltage and drain-source voltage were 30% and 35%, respectively. Additionally, an increased drain-source leakage current was observed at three-terminal off-state. It was inferred that the degradation was mainly related to electron-trapping defects in the InAlN barrier layer.
Bibliography:12-1248/T
Lattice-matched InAlN/AlN/GaN high electron mobility transistors （HEMTs） grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The experimental results indicated that a maximum drain current over 400 mA/mm and a peak external transconductance of 215 mS/mm can be achieved in the initial HEMTs. However, after the devices endured a 10-h thermal aging in furnace under nitrogen condition at 300 ℃, the maximum reduction of saturation drain current and external transconductance at high gate-source voltage and drain-source voltage were 30% and 35%, respectively. Additionally, an increased drain-source leakage current was observed at three-terminal off-state. It was inferred that the degradation was mainly related to electron-trapping defects in the InAlN barrier layer.
indium aluminum nitride gallium nitride sapphire metallorganic chemical vapor deposition high electron mobility transistor DC characteristic thermal aging
ISSN:1006-4982
1995-8196
DOI:10.1007/s12209-013-1920-0