Analysis of high speed p-i-n photodiode S-parameters by a novel small-signal equivalent circuit model

A novel small-signal radio frequency (RF) equivalent-circuit of the side-illuminated input tapered waveguide-integrated p-i-n photodiodes (WG PIN PD) is proposed. The proposed RF equivalent-circuit involves both the carrier-transit effect and the external resistance-capacitance (RC) time constant li...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 12; no. 10; pp. 378 - 380
Main Authors Wang, G., Tokumitsu, T., Hanawa, I., Sato, K., Kobayashi, M.
Format Journal Article
LanguageEnglish
Published IEEE 01.10.2002
Subjects
Capacitance
Current carriers
Current sources
Electrical resistance measurement
Equivalence
Equivalent circuits
Frequency measurement
Frequency ranges
Frequency response
Optical reflection
Optical waveguides
Photodiodes
PIN photodiodes
Radio frequencies
Radio frequency
RC circuits
Scattering parameters
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Summary:A novel small-signal radio frequency (RF) equivalent-circuit of the side-illuminated input tapered waveguide-integrated p-i-n photodiodes (WG PIN PD) is proposed. The proposed RF equivalent-circuit involves both the carrier-transit effect and the external resistance-capacitance (RC) time constant limitation on the frequency response of the p-i-n PD. The carrier-transit effect is realized by adding an RC circuit to an ideal voltage-controlled current source as the input opto-RF equivalent circuit. The carrier transit-time effect is equivalently represented by the time-constant of this input RC circuit. This new equivalent circuit model fits well with both the measured reflection and optoelectronic conversion parameters of the WG PIN PD in a broad frequency range from 45 MHz to 50 GHz.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2002.804557