Laser processing of LaB6-based thick film resistors

The paper studies the effect of laser processing on the structure and electrophysical properties of LaB 6 -based thick film resistors (TFR). The phases and structure of the composition are investigated. The exposure to micro-and nanosecond pulses, unlike millisecond ones, is shown to insignificantly...

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Published inPowder metallurgy and metal ceramics Vol. 47; no. 5-6; pp. 330 - 337
Main Authors Paustovskii, A. V., Rud’, B. M., Shelud’ko, V. E., Tel’nikov, E. Ya, Kremenitskii, V. V., Smertenko, P. S., Zakharchenko, I. V., Rogozinskaya, A. A.
Format Journal Article
LanguageEnglish
Published Boston Springer US 01.05.2008
Springer Nature B.V
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Summary:The paper studies the effect of laser processing on the structure and electrophysical properties of LaB 6 -based thick film resistors (TFR). The phases and structure of the composition are investigated. The exposure to micro-and nanosecond pulses, unlike millisecond ones, is shown to insignificantly increase the electrical resistance of the film and to aid in forming more uniform and fine TFR structure. LaB 6 -based TFRs are more resistant to long-term exposure to nanosecond laser radiation than BaB 6 -and (BaB 6 -LaB 6 )-based ones.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1068-1302
1573-9066
DOI:10.1007/s11106-008-9024-4