Investigation and solution of low yield problem for phase change memory with lateral fully-confined structure

This paper mainly focuses on solving the low yield problem for lateral phase change random access memory with a fully confined phase change material node. Improper over-etching and bad step-coverage of physical vapor deposition were the main reasons for the poor contact quality, which leads to the l...

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Bibliographic Details
Published inJournal of semiconductors Vol. 37; no. 8; pp. 63 - 66
Main Author 周亚玲 王晓峰 付英春 王晓东 杨富华
Format Journal Article
LanguageEnglish
Published 01.08.2016
Subjects
全封闭结构
台阶覆盖
屈服
扫描电子显微镜
沉积过程
物理气相沉积
相变存储器
随机存取存储器
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ISSN1674-4926
DOI10.1088/1674-4926/37/8/084005

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Summary:This paper mainly focuses on solving the low yield problem for lateral phase change random access memory with a fully confined phase change material node. Improper over-etching and bad step-coverage of physical vapor deposition were the main reasons for the poor contact quality, which leads to the low yield problem. Process improvement was carried out to better control over-etching within 10 nm. Atomic layer deposition process was used to replace physical vapor deposition to guarantee good step coverage. Contrasting cross-sectional photos taken by scanning electron microscopy showed great improvement in contact quality. The atom layer deposition process was demonstrated to have good prospects in nano-contact for phase change memory application.
Bibliography:This paper mainly focuses on solving the low yield problem for lateral phase change random access memory with a fully confined phase change material node. Improper over-etching and bad step-coverage of physical vapor deposition were the main reasons for the poor contact quality, which leads to the low yield problem. Process improvement was carried out to better control over-etching within 10 nm. Atomic layer deposition process was used to replace physical vapor deposition to guarantee good step coverage. Contrasting cross-sectional photos taken by scanning electron microscopy showed great improvement in contact quality. The atom layer deposition process was demonstrated to have good prospects in nano-contact for phase change memory application.
11-5781/TN
low yield; over-etching; fully confined; nanocontact; phase change random access memory
ISSN:1674-4926
DOI:10.1088/1674-4926/37/8/084005