The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates
We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma （ICP）. By fabricating a multilayer-graphene field-effect transistor on a Si/SiO2 substrate, we obtain that the superlineari...
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| Published in | Chinese physics letters Vol. 34; no. 6; pp. 84 - 86 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2017
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| Online Access | Get full text |
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| Summary: | We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma （ICP）. By fabricating a multilayer-graphene field-effect transistor on a Si/SiO2 substrate, we obtain that the superlinearity results from the interaction between the multilayer graphene sheet and the ICP-etched silicon, In addition, the observed superlinear transport of the device is found to be consistent with the prediction of Schwinger＇s mechanism. In the high bias regime, the values of a increase draxnatically from 1.02 to 1.40. The strength of the electric field corresponding to the on-start of electron-hole pair production is calculated to be 5 × 10^4 Vim. Our work provides an experimental observation of the nonlinear transport of the multilayer graphene. |
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| Bibliography: | 11-1959/O4 Yu-Bing Wang,Wei-Hong Yin, Qin Han, Xiao-Hong Yang, Han Ye, Shuai Wang, Qian-Qian Lv, Dong-Dong Yin（State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083） We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma （ICP）. By fabricating a multilayer-graphene field-effect transistor on a Si/SiO2 substrate, we obtain that the superlinearity results from the interaction between the multilayer graphene sheet and the ICP-etched silicon, In addition, the observed superlinear transport of the device is found to be consistent with the prediction of Schwinger＇s mechanism. In the high bias regime, the values of a increase draxnatically from 1.02 to 1.40. The strength of the electric field corresponding to the on-start of electron-hole pair production is calculated to be 5 × 10^4 Vim. Our work provides an experimental observation of the nonlinear transport of the multilayer graphene. |
| ISSN: | 0256-307X 1741-3540 |
| DOI: | 10.1088/0256-307X/34/6/067201 |