Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell
Low dislocation density Ge wafers grown by a vertical gradient freeze（VGF） method used for the fabrication of multi-junction photovoltaic cells（MJC） have been studied by a whole wafer scale measurement of the lattice parameter,X-ray rocking curves,etch pit density（EPD）,impurities concentration,minor...
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| Published in | Journal of semiconductors Vol. 37; no. 6; pp. 21 - 26 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2016
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/37/6/063002 |
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| Abstract | Low dislocation density Ge wafers grown by a vertical gradient freeze（VGF） method used for the fabrication of multi-junction photovoltaic cells（MJC） have been studied by a whole wafer scale measurement of the lattice parameter,X-ray rocking curves,etch pit density（EPD）,impurities concentration,minority carrier lifetime and residual stress.Impurity content in the VGF-Ge wafers,including that of B,is quite low although B_2O_3 encapsulation is used in the growth process.An obvious difference exists across the whole wafer regarding the distribution of etch pit density,lattice parameter,full width at half maximum（FWHM） of the X-ray rocking curve and residual stress measured by Raman spectra.These are in contrast to a reference Ge substrate wafer grown by the Cz method.The influence of the VGF-Ge substrate on the performance of the MJC is analyzed and evaluated by a comparison of the statistical results of cell parameters. |
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| AbstractList | Low dislocation density Ge wafers grown by a vertical gradient freeze（VGF） method used for the fabrication of multi-junction photovoltaic cells（MJC） have been studied by a whole wafer scale measurement of the lattice parameter,X-ray rocking curves,etch pit density（EPD）,impurities concentration,minority carrier lifetime and residual stress.Impurity content in the VGF-Ge wafers,including that of B,is quite low although B_2O_3 encapsulation is used in the growth process.An obvious difference exists across the whole wafer regarding the distribution of etch pit density,lattice parameter,full width at half maximum（FWHM） of the X-ray rocking curve and residual stress measured by Raman spectra.These are in contrast to a reference Ge substrate wafer grown by the Cz method.The influence of the VGF-Ge substrate on the performance of the MJC is analyzed and evaluated by a comparison of the statistical results of cell parameters. |
| Author | 曹可慰 刘彤 刘京明 谢辉 陶东言 赵有文 董志远 惠峰 |
| AuthorAffiliation | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese academy of Sciences,Beijing 100083, China |
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| Notes | 11-5781/TN crystallities X-ray diffraction semiconducting germanium semiconducting gallium arsenide solar cells Low dislocation density Ge wafers grown by a vertical gradient freeze（VGF） method used for the fabrication of multi-junction photovoltaic cells（MJC） have been studied by a whole wafer scale measurement of the lattice parameter,X-ray rocking curves,etch pit density（EPD）,impurities concentration,minority carrier lifetime and residual stress.Impurity content in the VGF-Ge wafers,including that of B,is quite low although B_2O_3 encapsulation is used in the growth process.An obvious difference exists across the whole wafer regarding the distribution of etch pit density,lattice parameter,full width at half maximum（FWHM） of the X-ray rocking curve and residual stress measured by Raman spectra.These are in contrast to a reference Ge substrate wafer grown by the Cz method.The influence of the VGF-Ge substrate on the performance of the MJC is analyzed and evaluated by a comparison of the statistical results of cell parameters. |
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| References | 11 22 12 13 15 16 Xiaosheng Qu (14) 2013; 34 Surek T (9) 2004; 10 Chaohua Jin (17) 2013; 34 18 19 1 2 3 4 5 6 7 8 20 10 21 |
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| Snippet | Low dislocation density Ge wafers grown by a vertical gradient freeze（VGF） method used for the fabrication of multi-junction photovoltaic cells（MJC） have been... |
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| SubjectTerms | VGF 制造 多结 太阳能电池 少数载流子寿命 提拉法生长 腐蚀坑密度 评价 |
| Title | Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell |
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