Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell

Low dislocation density Ge wafers grown by a vertical gradient freeze（VGF） method used for the fabrication of multi-junction photovoltaic cells（MJC） have been studied by a whole wafer scale measurement of the lattice parameter,X-ray rocking curves,etch pit density（EPD）,impurities concentration,minor...

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Bibliographic Details
Published inJournal of semiconductors Vol. 37; no. 6; pp. 21 - 26
Main Author 曹可慰 刘彤 刘京明 谢辉 陶东言 赵有文 董志远 惠峰
Format Journal Article
LanguageEnglish
Published 01.06.2016
Subjects
VGF
制造
多结
太阳能电池
少数载流子寿命
提拉法生长
腐蚀坑密度
评价
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ISSN1674-4926
DOI10.1088/1674-4926/37/6/063002

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Summary:Low dislocation density Ge wafers grown by a vertical gradient freeze（VGF） method used for the fabrication of multi-junction photovoltaic cells（MJC） have been studied by a whole wafer scale measurement of the lattice parameter,X-ray rocking curves,etch pit density（EPD）,impurities concentration,minority carrier lifetime and residual stress.Impurity content in the VGF-Ge wafers,including that of B,is quite low although B_2O_3 encapsulation is used in the growth process.An obvious difference exists across the whole wafer regarding the distribution of etch pit density,lattice parameter,full width at half maximum（FWHM） of the X-ray rocking curve and residual stress measured by Raman spectra.These are in contrast to a reference Ge substrate wafer grown by the Cz method.The influence of the VGF-Ge substrate on the performance of the MJC is analyzed and evaluated by a comparison of the statistical results of cell parameters.
Bibliography:11-5781/TN
crystallities X-ray diffraction semiconducting germanium semiconducting gallium arsenide solar cells
Low dislocation density Ge wafers grown by a vertical gradient freeze（VGF） method used for the fabrication of multi-junction photovoltaic cells（MJC） have been studied by a whole wafer scale measurement of the lattice parameter,X-ray rocking curves,etch pit density（EPD）,impurities concentration,minority carrier lifetime and residual stress.Impurity content in the VGF-Ge wafers,including that of B,is quite low although B_2O_3 encapsulation is used in the growth process.An obvious difference exists across the whole wafer regarding the distribution of etch pit density,lattice parameter,full width at half maximum（FWHM） of the X-ray rocking curve and residual stress measured by Raman spectra.These are in contrast to a reference Ge substrate wafer grown by the Cz method.The influence of the VGF-Ge substrate on the performance of the MJC is analyzed and evaluated by a comparison of the statistical results of cell parameters.
ISSN:1674-4926
DOI:10.1088/1674-4926/37/6/063002