Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors
The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors （nMOSFETs）. It is found that...
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| Published in | Chinese physics letters Vol. 31; no. 9; pp. 141 - 143 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.09.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0256-307X 1741-3540 |
| DOI | 10.1088/0256-307X/31/9/097302 |
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| Abstract | The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors （nMOSFETs）. It is found that Rsd achieved from the constant- mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs. |
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| AbstractList | The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors （nMOSFETs）. It is found that Rsd achieved from the constant- mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs. |
| Author | 马丽娟 纪小丽 陈原聪 夏好广 朱晨昕 郭强 闫锋 |
| AuthorAffiliation | School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 Wuhan Xinxin Semiconductor Manufacturing Corporation, Wuhan 430205 |
| Author_xml | – sequence: 1 fullname: 马丽娟 纪小丽 陈原聪 夏好广 朱晨昕 郭强 闫锋 |
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| Cites_doi | 10.1109/55.974590 10.1016/j.microrel.2009.05.005 10.1109/LED.2009.2026592 10.1149/1.3005569 10.1088/0268-1242/24/10/105015 10.1109/LED.2011.2158183 10.1088/0268-1242/28/11/115009 10.1088/0256-307X/22/8/055 10.1109/LED.2007.909850 10.1016/0038-1101(95)00269-3 10.1109/16.24353 10.1109/TNANO.2009.2028024 10.7498/aps.60.017202 10.1143/JJAP.18.953 |
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| DocumentTitleAlternate | Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors |
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| Notes | 11-1959/O4 MA Li-Juan, JI Xiao-Li, CHEN Yuan-Cong, XIA Hao-Guang, ZHU Chen-Xin, GUO Qiang, YAN Feng （ 1. School of Electronic Science and Engineering, Nanjing University, Nanfing 210093 2. Wuhan Xinxin Semiconductor Manufacturing Corporation, Wuhan 430205） The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors （nMOSFETs）. It is found that Rsd achieved from the constant- mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs. |
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| PublicationTitle | Chinese physics letters |
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| References | Chang Y H (4) 2007; 87 11 Muci J (7) 2009; 24 12 14 Chang J G (16) 2013; 28 Wolf S (17) 1995; 3 15 Zhu S Y (3) 2005; 22 18 Terada K (1) 1979; 18 Fleury D (8) 2008 Li B (2) 2011; 60 Campbell J P (13) 2012 5 6 9 10 |
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| Snippet | The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance... |
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| StartPage | 141 |
| SubjectTerms | MOSFET Rsd 串联电阻 半导体场效应晶体管 提取方法 氧化物 通道长度 金属 |
| Title | Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors |
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