Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors

The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors （nMOSFETs）. It is found that...

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Bibliographic Details
Published inChinese physics letters Vol. 31; no. 9; pp. 141 - 143
Main Author 马丽娟 纪小丽 陈原聪 夏好广 朱晨昕 郭强 闫锋
Format Journal Article
LanguageEnglish
Published 01.09.2014
Subjects
MOSFET
Rsd
串联电阻
半导体场效应晶体管
提取方法
氧化物
通道长度
金属
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/31/9/097302

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Summary:The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors （nMOSFETs）. It is found that Rsd achieved from the constant- mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs.
Bibliography:11-1959/O4
MA Li-Juan, JI Xiao-Li, CHEN Yuan-Cong, XIA Hao-Guang, ZHU Chen-Xin, GUO Qiang, YAN Feng （ 1. School of Electronic Science and Engineering, Nanjing University, Nanfing 210093 2. Wuhan Xinxin Semiconductor Manufacturing Corporation, Wuhan 430205）
The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors （nMOSFETs）. It is found that Rsd achieved from the constant- mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/9/097302