Fabrication of sub-0.5-micron GaAs Schottky diodes

A Thin-film Schottky diode with a contact area of less than 4 x 10 -10cm 2 was fabricated using a combination of electron beam lithography and dry etching. The detection experiments were designed for 9.5GHz microwave and 94GHz millimeter wave. The results indicate that static current-voltage charact...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 11; no. 1; pp. 101 - 104
Main Authors Yasuoka, Yoshizumi, Takao, Hiromitsu, Inoue, Narumi
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 1990
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:A Thin-film Schottky diode with a contact area of less than 4 x 10 -10cm 2 was fabricated using a combination of electron beam lithography and dry etching. The detection experiments were designed for 9.5GHz microwave and 94GHz millimeter wave. The results indicate that static current-voltage characteristics extend to 94GHz.
Bibliography:SourceType-Scholarly Journals-2
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ObjectType-Conference Paper-1
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SourceType-Conference Papers & Proceedings-1
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ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(90)90081-4