Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3

Ammonium sulfide ((NH4)2S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH4)2S. It was...

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Bibliographic Details
Published inMaterials Vol. 12; no. 23; p. 3917
Main Authors Lee, Jung Sub, Ahn, Tae Young, Kim, Daewon
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 27.11.2019
MDPI
Subjects
Aluminum oxide
Ammonium sulfides
Capacitors
Communication
Depletion
Electrical properties
Indium phosphides
Metal oxide semiconductors
Passivity
Photoelectrons
Spectrum analysis
Substrates
Sulfur
X ray photoelectron spectroscopy
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Summary:Ammonium sulfide ((NH4)2S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH4)2S. It was found that a 10% (NH4)2S treatment for 10 min exhibits the best electrical properties in terms of hysteresis and frequency dispersions in the depletion or accumulation mode. After the InP substrate was passivated by the optimized (NH4)2S, the results of x-ray photoelectron spectroscopy (XPS) and the extracted interface trap density (Dit) proved that the growth of native oxide was suppressed.
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content type line 23
ISSN:1996-1944
1996-1944
DOI:10.3390/ma12233917