Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor

Ruthenium thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) technology using Ru(EtCp)2 and oxygen plasma on the modified surface of silicon and SiO2/Si substrates. The crystal structure, chemical composition, and morphology of films were characterized by grazing incidence...

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Bibliographic Details
Published inCoatings (Basel) Vol. 11; no. 2; p. 117
Main Authors Rogozhin, Alexander, Miakonkikh, Andrey, Smirnova, Elizaveta, Lomov, Andrey, Simakin, Sergey, Rudenko, Konstantin
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.02.2021
Subjects
Atomic force microscopy
Atomic layer epitaxy
Atomic properties
Chemical composition
Chemical vapor deposition
Crystal structure
Electrical resistivity
Film growth
Film thickness
Gases
Investigations
Low temperature
Morphology
Oxygen plasma
Plasma
Reaction mechanisms
Ruthenium
Scanning electron microscopy
Secondary ion mass spectrometry
Silicon dioxide
Silicon substrates
Silicon wafers
Surface reactions
Surface roughness
Thin films
Japan
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Summary:Ruthenium thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) technology using Ru(EtCp)2 and oxygen plasma on the modified surface of silicon and SiO2/Si substrates. The crystal structure, chemical composition, and morphology of films were characterized by grazing incidence XRD (GXRD), secondary ion mass spectrometry (SIMS), and atomic force microscopy (AFM) techniques, respectively. It was found that the mechanism of film growth depends crucially on the substrate temperature. The GXRD and SIMS analysis show that at substrate temperature T = 375 °C, an abrupt change in surface reaction mechanisms occurs, leading to the changing in film composition from RuO2 at low temperatures to pure Ru film at higher temperatures. It was confirmed by electrical resistivity measurements for Ru-based films. Mechanical stress in the films was also analyzed, and it was suggested that this factor increases the surface roughness of growing Ru films. The lowest surface roughness ~1.5 nm was achieved with a film thickness of 29 nm using SiO2/Si-substrate for deposition at 375 °C. The measured resistivity of Ru film is 18–19 µOhm·cm (as deposited).
ISSN:2079-6412
2079-6412
DOI:10.3390/coatings11020117