Broadening the absorption bandwidth based on heavily doped semiconductor nanostructures
Broadband light absorption is a basis for the proper functionality of various materials, microstructures, and devices. Despite numerous studies, however, many aspects of broadband absorption remain uncovered. In this paper, we demonstrate an inverse-problem approach to designing nanostructures with...
Saved in:
Published in | Optics express Vol. 30; no. 20; pp. 36622 - 36631 |
---|---|
Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
26.09.2022
|
Online Access | Get full text |
Cover
Loading…
Summary: | Broadband light absorption is a basis for the proper functionality of various materials, microstructures, and devices. Despite numerous studies, however, many aspects of broadband absorption remain uncovered. In this paper, we demonstrate an inverse-problem approach to designing nanostructures with a very low optical reflection and high absorption through a frequency band. Particular emphasis is made on a subwavelength transparent film as a top layer and anisotropic substrate. The polarization-dependent metamaterial absorber based on a subwavelenth semiconductor multicomponent multilayer structure is proposed and numerically investigated. For an illustration, we consider a four-component heavily doped silicon lattice with a thin undoped silicon top layer. The dielectric response of the structure is engineered by controlling the free carrier density and filling factor of each layer. A simulation study reveals a power law dependence of the bandwidth on the maximum reflectivity within the band. |
---|---|
Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1094-4087 1094-4087 |
DOI: | 10.1364/OE.472788 |