Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region

Saved in:
Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 32; no. 12; pp. 1323 - 1327
Main Authors Evtikhiev, V. P., Kudryashov, I. V., Kotel’nikov, E. Yu, Tokranov, V. E., Titkov, A. N., Tarasov, I. S., Alferov, Zh. I.
Format Journal Article
LanguageEnglish
Published 01.12.1998
Online AccessGet full text

Cover

More Information
ISSN:1063-7826
1090-6479
DOI:10.1134/1.1187622