Correlation between visual defects and increased dark current in large-area Hg1−xCdxTe photodiodes

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Bibliographic Details
Published in	Journal of electronic materials Vol. 34; no. 6; pp. 933 - 938
Main Authors	D’Souza, A. I., Stapelbroek, M. G., Willis, R., Masterjohn, S., Dolan, P., Alderete, M., Bryan, E., Ehlert, J. C., Andrews, J. E., Wijewarnasuriya, P. S., Boehmer, E., Bhargava, S.
Format	Journal Article Conference Proceeding
Language	English
Published	New York, NY Institute of Electrical and Electronics Engineers 01.06.2005
Subjects	Applied sciences Electronics Exact sciences and technology Materials Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Correlation Semiconductor materials dark current Diode Zinc tellurides Transition element compounds Photodiode Quantum yield Wavelength Inorganic compound Detector Cadmium tellurides photodiodes Mismatch lattice Molecular beam epitaxy Defect Mercury tellurides HgCdTe visual defects Performance Double layers Heterostructures
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ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-005-0045-1