Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm

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Bibliographic Details
Published in	Semiconductors (Woodbury, N.Y.) Vol. 31; no. 11; p. 1200
Main Author	Danilova, T. N.
Format	Journal Article
Language	English
Published	01.11.1997
Online Access	Get full text

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ISSN:	1063-7826
DOI:	10.1134/1.1187294