Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 33; no. 6; pp. 672 - 676
Main Authors Belous, M. V., Genkin, A. M., Genkina, V. K.
Format Journal Article
LanguageEnglish
Published 01.06.1999
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ISSN:1063-7826
1090-6479
DOI:10.1134/1.1187754