The permittivity in a magnetic field on thin SiOx layers containing Fe and Ni

• Published in: Vacuum Vol. 47; no. 9; pp. 1105 - 1106
• Main Authors: SMIRNOV, N, NEDEV, N, KOPRINAROVA, J, DIMITROV, D. B
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier 01.09.1996
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dielectric properties of solids and liquids; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Metal-insulator-semiconductor structures (including semiconductor-to-insulator); Permittivity (dielectric function); Physics; Thin films; Silicon oxides; Inclusion compounds; Transition elements; Magnetic field effects; MIS structure; Iron additions; Experimental study; Nickel additions; Permittivity
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/0042-207X(96)00127-3