Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire

• Published in: Applied physics letters Vol. 84; no. 18; pp. 3486 - 3488
• Main Authors: Dhara, S., Datta, A., Wu, C. T., Lan, Z. H., Chen, K. H., Wang, Y. L., Chen, Y. F., Hsu, C. W., Chen, L. C., Lin, H. M., Chen, C. C.
• Format: Journal Article
• Language: English
• Published: 03.05.2004
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.1738172

Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50 keV Ga+ focused ion beam in the fluence range of 1×1014–2×1016 ions cm−2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor–acceptor pair model with emission involving shallow donor introduced by point-defect clusters related to nitrogen vacancies and probable deep acceptor created by gallium interstitial clusters is responsible for the shift. High-temperature annealing in nitrogen ambient restores the peak position of YL band by removing nitrogen vacancies.