An investigation on silar Cu(In1−xAlx)Se2 thin films

Cu(In1ax Al x )Se2 [CIAS] thin films were prepared for the first time by successive ionic layer adsorption and reaction [SILAR] method with two different dipping cycles. The thickness of the films was measured by gravimetric technique. The structural, morphological, compositional, optical transition...

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Published inMaterials science & engineering. B, Solid-state materials for advanced technology Vol. 174; no. 1-3; pp. 209 - 215
Main Authors Dhanam, M, Kavitha, B, Velumani, S
Format Journal Article
LanguageEnglish
Published 25.10.2010
Subjects
Adsorption
Aluminum
Dipping
Gravimeters
Materials science
Optical transition
Thin films
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Summary:Cu(In1ax Al x )Se2 [CIAS] thin films were prepared for the first time by successive ionic layer adsorption and reaction [SILAR] method with two different dipping cycles. The thickness of the films was measured by gravimetric technique. The structural, morphological, compositional, optical transition and electrical investigation of SILAR CIAS thin films with respect to two different dipping cycles have been discussed in this paper.
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ISSN:0921-5107
DOI:10.1016/j.mseb.2010.03.028