Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3 µm) due to nonlinear optical effects
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Published in | Semiconductors (Woodbury, N.Y.) Vol. 33; no. 2; pp. 210 - 215 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.02.1999
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Online Access | Get full text |
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ISSN: | 1063-7826 1090-6479 |
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DOI: | 10.1134/1.1187672 |