Single event effects analysis and charge collection mechanisms on AlGaN/GaN HEMTs

This paper focuses on the effect of single event transients on AlGaN/GaN on sapphire high-electron-mobility-transistors (HEMTs). This results in a novel study in high performance transistors using sapphire substrate. Technology computer aided design tools are used in order to perform the radiation s...

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Bibliographic Details
Published inSemiconductor science and technology Vol. 34; no. 3; pp. 35029 - 35036
Main Authors Mateos-Angulo, S, Rodríguez, R, del Pino, J, González, B, Khemchandani, S L
Format Journal Article
LanguageEnglish
Published IOP Publishing 25.02.2019
Subjects
AlGaN/GaN
charge collection
electron-hole pair
heavy-ion
SET
TCAD
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Summary:This paper focuses on the effect of single event transients on AlGaN/GaN on sapphire high-electron-mobility-transistors (HEMTs). This results in a novel study in high performance transistors using sapphire substrate. Technology computer aided design tools are used in order to perform the radiation simulations, once the DC response of the transistors have been reproduced. Results show the relationship of the drain current density with ion energy and angle of incidence. The current increases as the ion penetrates deeper in the device due to higher energies, while it decreases as the angle increases. To our knowledge, angle strikes have never been studied before in AlGaN/GaN HEMTs. Several charge collection mechanisms are discussed and their relationships with ion energy and angle of incidence are established.
Bibliography:SST-105249.R1
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ab058a