W-band push-push monolithic frequency doubler in 1-μm InP DHBT technology

A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A mu...

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Bibliographic Details
Published inJournal of semiconductors Vol. 34; no. 9; pp. 122 - 127
Main Author 姚鸿飞 王显泰 吴旦昱 苏永波 曹玉雄 葛霁 宁晓曦 金智
Format Journal Article
LanguageEnglish
Published 01.09.2013
Subjects
DHBT
InP
倍频器
单片
差分结构
技术
波段
谐波频率
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/34/9/095006

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Summary:A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 x 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion Rain above 4.7 dB over 75-80 GHz.
Bibliography:A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 x 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion Rain above 4.7 dB over 75-80 GHz.
Yao Hongfei, Wang Xiantai, Wu Danyu, Su Yongbo, Cao Yuxiong, Ge Ji, Ning Xiaoxi, and Jin Zhit Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
11-5781/TN
frequency doubler; W-band; lnP; DHBT; push-push
ISSN:1674-4926
DOI:10.1088/1674-4926/34/9/095006