Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire
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Published in | Science China Technological Sciences Vol. 53; no. 9; pp. 2363 - 2366 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.09.2010
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Online Access | Get full text |
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ISSN: | 1674-7321 1862-281X |
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DOI: | 10.1007/s11431-010-4049-6 |