Photoconductive gating of picosecond electrical pulses on thinned-silicon substrates

A microstrip photoconductive switch was fabricated on a thinned-Si substrate of thickness less than the penetration depth of the excitation radiation. Utilizing a delayed electrical grounding process, rather than carrier recombination, to terminate the generated electrical transient, the switch can...

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Bibliographic Details
Published inElectronics letters Vol. 36; no. 14; pp. 1225 - 1226
Main Authors Holzman, J F, Vermeulen, F E, Arnold, B W, Elezzabi, A Y
Format Journal Article
LanguageEnglish
Published 06.07.2000
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Summary:A microstrip photoconductive switch was fabricated on a thinned-Si substrate of thickness less than the penetration depth of the excitation radiation. Utilizing a delayed electrical grounding process, rather than carrier recombination, to terminate the generated electrical transient, the switch can be used to generate picosecond electrical pulses. The optical excitation pulse is responsible for both `turning on' and later `turning off' the electrical transient, eliminating the necessity for an ultrashort carrier lifetime in the semiconductor substrate.
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ISSN:0013-5194
DOI:10.1049/el:20000895