Silicon carbide Schottky diodes and MOSFETs: Solutions to performance problems

Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have delivered devices that operate at higher voltages, higher temperatures and with lower on-resistances than silicon devices. However, SiC Schottk...

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Bibliographic Details
Published in2008 13th International Power Electronics and Motion Control Conference pp. 2464 - 2471
Main Authors Guy, O.J., Lodzinski, M., Castaing, A., Igic, P.M., Perez-Tomas, A., Jennings, M.R., Mawby, P.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2008
Subjects
High temperature electronics
Leakage current
Metals
MOSFET
New switching devices
Power semiconductor device
Schottky barriers
Schottky diodes
Silicon
Silicon carbide
Temperature
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Summary:Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have delivered devices that operate at higher voltages, higher temperatures and with lower on-resistances than silicon devices. However, SiC Schottky diodes are still the only devices commercially available today. Though SiC Schottkys are now being used with silicon IGBTs in dasiahybridpsila inverter modules, the real advantages will be seen when silicon switching devices can be replaced by SiC. This paper describes the current state of SiC diode and MOSFET technology, discussing possible solutions to making these devices commercially viable.
ISBN:9781424417414
1424417414
DOI:10.1109/EPEPEMC.2008.4635633