The role of one-dimensional diffusion in a growth model of the surface of a Kossel’s crystal

The kinetic mechanism of defect formation on a vicinal surface misoriented in two directions, in the case of molecular-beam epitaxy, is studied. These defects are two adatoms stuck together in a potential trench near the step edge. The effects of the surface parameters, as well as growth rate on the...

Full description

Saved in:
Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 40; no. 3; pp. 367 - 374
Main Authors Boĭko, A. M., Suris, R. A.
Format Journal Article
LanguageEnglish
Published United States 01.03.2006
Subjects
CRYSTAL DEFECTS
CRYSTALS
DIFFUSION
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SURFACES
Online AccessGet full text

Cover

More Information
Summary:The kinetic mechanism of defect formation on a vicinal surface misoriented in two directions, in the case of molecular-beam epitaxy, is studied. These defects are two adatoms stuck together in a potential trench near the step edge. The effects of the surface parameters, as well as growth rate on the probability of defect formation are studied. It is shown that an increase in the misorientation angle of the surface is conducive to a drastic decrease in the number of defects during growth.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782606030213