Planar disorder- and native-oxide-defined photopumped AlAs–GaAs superlattice minidisk lasers
Data are presented on the photopumped laser operation of planar AlAs–GaAs superlattice (SL) minidisk lasers. The SL minidisk (70 Å AlAs, 30 Å GaAs; 100 periods; ∼37 μm diameter) is defined by impurity-induced layer disordering (IILD), followed by wet oxidation (N2+H2O vapor, 400 °C which surrounds t...
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Published in | Journal of applied physics Vol. 79; no. 11; pp. 8204 - 8209 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
01.06.1996
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Online Access | Get more information |
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Summary: | Data are presented on the photopumped laser operation of planar AlAs–GaAs superlattice (SL) minidisk lasers. The SL minidisk (70 Å AlAs, 30 Å GaAs; 100 periods; ∼37 μm diameter) is defined by impurity-induced layer disordering (IILD), followed by wet oxidation (N2+H2O vapor, 400 °C which surrounds the minidisk with a low-refractive-index AlGaAs oxide. The planar minidisks exhibit laser operation at λ∼7540 Å, with wider mode separation (Δλ∼13 Å) than disks defined by only IILD (a smaller refractive index step) and cleaved sample edges. The mode separation of Δλ∼13 Å corresponds to disk modes that utilize the perimeter of the oxide-defined disks. In the fabrication of the SL minidisks, IILD forms a structural and doping difference beyond the disk perimeter that acts, in effect, as a p–n junction during etching or wet oxidation. Etch profiles are shown demonstrating this behavior. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.362460 |