Defects in metamorphic InxAl1−xAs (x<0.4) epilayers grown on GaAs substrates

Defects in Si-doped InxAl1−xAs (0<x<0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in InxAl1−xAs grown by molecular beam epitaxy. Their energy levels can be extrapolated...

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Bibliographic Details
Published inJournal of applied physics Vol. 82; no. 1; pp. 210 - 213
Main Authors Shieh, Jia-Lin, Chang, Mao-Nan, Cheng, Yung-Shih, Chyi, Jen-Inn
Format Journal Article
LanguageEnglish
Published 01.07.1997
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Summary:Defects in Si-doped InxAl1−xAs (0<x<0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in InxAl1−xAs grown by molecular beam epitaxy. Their energy levels can be extrapolated from those in the InxAl1−xAs/InP system. A low-temperature-grown buffer layer as well as thermal annealing were found to be capable of reducing the defects in the active layer effectively.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.365799