A 20.5-nW Resistor-Less Bandgap Voltage Reference With Self-Biased Compensation for Process Variations

• Published in: IEEE transactions on very large scale integration (VLSI) systems Vol. 30; no. 6; pp. 840 - 843
• Main Authors: Ji, Youngwoo, Sim, Jae-Yoon
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.06.2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bandgap reference (BGR); Energy gap; MOS devices; Photonic band gap; process compensation; Resistors; Semiconductor devices; sensor application; Temperature distribution; Temperature measurement; Threshold voltage; Transistors; ultralow-power (ULP); Very large scale integration; voltage reference

This brief proposes a resistor-less bandgap reference (BGR) based on a leakage-based proportional-to-absolute-temperature (PTAT) scheme. The effect of process variations on the current is mitigated by employing self-biased current-limiting MOS transistors. The bias voltages needed for approximating...