A 20.5-nW Resistor-Less Bandgap Voltage Reference With Self-Biased Compensation for Process Variations

This brief proposes a resistor-less bandgap reference (BGR) based on a leakage-based proportional-to-absolute-temperature (PTAT) scheme. The effect of process variations on the current is mitigated by employing self-biased current-limiting MOS transistors. The bias voltages needed for approximating...

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Bibliographic Details
Published inIEEE transactions on very large scale integration (VLSI) systems Vol. 30; no. 6; pp. 840 - 843
Main Authors Ji, Youngwoo, Sim, Jae-Yoon
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2022
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bandgap reference (BGR)
Energy gap
MOS devices
Photonic band gap
process compensation
Resistors
Semiconductor devices
sensor application
Temperature distribution
Temperature measurement
Threshold voltage
Transistors
ultralow-power (ULP)
Very large scale integration
voltage reference
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Summary:This brief proposes a resistor-less bandgap reference (BGR) based on a leakage-based proportional-to-absolute-temperature (PTAT) scheme. The effect of process variations on the current is mitigated by employing self-biased current-limiting MOS transistors. The bias voltages needed for approximating a large resistance can be obtained from a single branch by placing threshold-sampling transistors on top of the BGR output. The fabricated BGR in 0.18-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> CMOS occupies an active area of 0.035 mm 2 and consumes 20.5 nW, and it shows a standard deviation of 0.68% at untrimmed reference voltages.
ISSN:1063-8210
1557-9999
DOI:10.1109/TVLSI.2022.3158729