Laser heterodyne optovoltaic effect in the microwave range
Dynamic characteristics of the optovoltaic effect in the mega-and gigahertz range have been studied by detecting longitudinal modes of a semiconductor injection laser diode with a tunable external resonator. The electron lifetime in the active region of the p-n junction was determined by measuring t...
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Published in | Technical physics letters Vol. 32; no. 6; pp. 514 - 516 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
New York
Springer Nature B.V
01.06.2006
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Subjects | |
Online Access | Get full text |
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Summary: | Dynamic characteristics of the optovoltaic effect in the mega-and gigahertz range have been studied by detecting longitudinal modes of a semiconductor injection laser diode with a tunable external resonator. The electron lifetime in the active region of the p-n junction was determined by measuring the amplitude of the alternating injection current component at an intermode beat frequency in the course of resonator length tuning. As the resonator length was varied from 1 m to 3 cm, the beat frequency changed from 150 MHz to 5 GHz. In this case, the characteristic range of the optovoltaic effect in GaAlAs laser diodes (λ = 0.82 μm) is limited by the spontaneous electron recombination time, which is on the order of 0.8 ns. An electron-photon noise resonance has been observed in the coherent radiation and in the injection current. |
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ISSN: | 1063-7850 1090-6533 |
DOI: | 10.1134/S1063785006060198 |