Electron injection model for the particle simulation of 3D, 2D, and 1D nanoscale FETs

In nanoscale devices, electron transport tends to become ballistic. Then, the current and the noise are mainly determined by the injection process. An electron injection model suitable for the semi-classical Monte Carlo (or time-dependent quantum) simulation of nanoscale devices with (or without ele...

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Bibliographic Details
Published inJournal of computational electronics Vol. 6; no. 1-3; pp. 7 - 10
Main Authors Oriols, X., Fernàndez-Díaz, E.
Format Journal Article
LanguageEnglish
Published Dordrecht Springer Nature B.V 01.09.2007
Subjects
Boundary conditions
Confinement
Electron transport
Field effect transistors
Nanotechnology devices
Signal to noise ratio
Time dependence
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Summary:In nanoscale devices, electron transport tends to become ballistic. Then, the current and the noise are mainly determined by the injection process. An electron injection model suitable for the semi-classical Monte Carlo (or time-dependent quantum) simulation of nanoscale devices with (or without electron) confinement is presented. While the injection model is conceptually quite similar to the boundary conditions used in the Landauer formalism, its mathematical description is quite different because it is developed for time-dependent scenarios. As an application, numerical data show that the signal-to-noise ratio and the bit-error probability are degraded in nanoscale transistors because of electron confinement.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-006-0060-3