Forward-voltage-tunable schottky-integrated trench MOSFETs

We presented the 4-photo-mask schottky-integrated trench MOSFETs. Traditionally monolithic schottky-integrated MOSFETs are composed of two regions: one is MOSFET cells, the other is schottky cells. However, it needs additional mask and processes for schottky structures. 30V schottky-integrated trenc...

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Bibliographic Details
Published in2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 159 - 162
Main Authors Chuang, Chiao-Shun Patrick, Chen, Kai-Yu Gary, Hung, Yu-Ren Ryan, Kuo, Ta-Chuan, Huang, Cheng-Chin Tony
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
Etching
Implants
Junctions
Metals
MOSFET
Schottky barriers
Schottky diodes
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Summary:We presented the 4-photo-mask schottky-integrated trench MOSFETs. Traditionally monolithic schottky-integrated MOSFETs are composed of two regions: one is MOSFET cells, the other is schottky cells. However, it needs additional mask and processes for schottky structures. 30V schottky-integrated trench MOSFETs by self-aligned schottky into every MOS cell was successfully fabricated in this paper. Trench mask was utilized for body implant and trench etching. Forward voltage (V F ) is tunable by tilt angle implant after contact etching. Furthermore, UIS (unclamped Inductive Switching) ability was also improved comparing to conventional trench MOSFETs. Finally, relationship between V F , Idss (drain leakage current), and Qrr (reverse recovery charge) could be optimized for improving the efficiency for DC-DC converters.
ISBN:9781479929177
1479929174
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2014.6856000