An AlInAsSb/GaSb Superlattice Analysis - The Digital Alloy Iduced Conduction Band States

Photoreflectance (PR) and photoluminescence (PL) has been measured on the set of four samples containing 12 periods of a GaSb and an AlInAsSb digital alloy with various average Al fractions, both 12nm thick. Using 8kp with envelope function approximation, PL and PR spectra are qualitatively explaine...

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Bibliographic Details
Published in2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 45 - 46
Main Authors Maczko, H. S., Kopaczek, J., Maddox, S. J., Rockwell, A. K., March, S. D., Gladysiewicz, M., Bank, S. R., Kudrawiec, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
8kp model
AlInAsSb/GaSb
digital alloy
Digital alloys
envelope function approximation
Microelectronics
Oscillators
Photoluminescence
photoreflectance
Physics
superlattice
Superlattices
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Summary:Photoreflectance (PR) and photoluminescence (PL) has been measured on the set of four samples containing 12 periods of a GaSb and an AlInAsSb digital alloy with various average Al fractions, both 12nm thick. Using 8kp with envelope function approximation, PL and PR spectra are qualitatively explained. States in conduction bands are classified in three general groups, which are used during further systematic description of various superlattice cases.
ISSN:2158-3242
DOI:10.1109/NUSOD.2018.8570228