Investigations on n-CdO/p-CdTe thin film heterojunctions

• Published in: Thin solid films Vol. 253; no. 1-2; pp. 339 - 343
• Main Authors: SRAVANI, C, REDDY, K. T. R, HUSSAIN, O. M, JAYARAMA REDDY, P
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Lausanne Elsevier Science 15.12.1994
• Subjects: Cadmium compounds; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Evaporation; Exact sciences and technology; Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Physics; Q1; Cadmium oxides; Electron beams; Cadmium tellurides; Capacitance; p n heterojunctions; IV characteristic; Spectral analysis
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(94)90344-1

n-CdO films were deposited by activated reactive evaporation on Corning 7059 glass substrates maintained at 473 K. p-CdTe films were electron beam evaporated onto n-CdO films at 548 K. A typical Corning 7059 glass/n-CdO/p-CdTe/Cu-Au heterojunction was fabricated and its current-voltage, capacitance-voltage characteristics and spectral response were studied. An electrical conversion efficiency of about 7.7%, with an open-circuit voltage of 695 mV and short-circuit current density of 17.3 mA cm super(-2), was observed for the cell of an active area of 1 cm super(2) under a solar input of 85 mW cm super(-2).