Cooling Limits for GaN HEMT Technology

The peak power density of GaN HEMT technology is limited by a hierarchy of thermal resistances from the junction to the ambient. Here we explore the ultimate or fundamental cooling limits made possible by advanced thermal management technologies including GaN-diamond composites and nanoengineered he...

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Bibliographic Details
Published in2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) pp. 1 - 5
Main Authors Yoonjin Won, Jungwan Cho, Agonafer, Damena, Asheghi, Mehdi, Goodson, Kenneth E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2013
Subjects
Cooling
Diamonds
Gallium nitride
Heat transfer
Heating
Thermal resistance
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Summary:The peak power density of GaN HEMT technology is limited by a hierarchy of thermal resistances from the junction to the ambient. Here we explore the ultimate or fundamental cooling limits made possible by advanced thermal management technologies including GaN-diamond composites and nanoengineered heat sinks. Through continued attention to near-junction resistances and extreme flux convection, power densities that may exceed 50 kW/cm2 - depending on gate width and hotspot dimension - are feasible within 5 years.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2013.6659222