Three-point method of prediction of MOS device response in space environments

A method for low-dose-rate MOS device response prediction based on the linear dependence between positive oxide charge anneal and interface states build-up is presented and experimentally verified. A linear relationship is seen to exist between the build-up of slow interface states and oxide trapped...

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Published inIEEE transactions on nuclear science Vol. 40; no. 6; pp. 1714 - 1720
Main Authors Pershenkov, V.S., Belyakov, V.V., Cherepko, S.V., Shvetzov-Shilovsky, I.N.
Format Journal Article
LanguageEnglish
Published IEEE 01.12.1993
Subjects
Annealing
Convolution
Equations
Hydrogen
Interface states
Microelectronics
MOS devices
Physics
Testing
Threshold voltage
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Summary:A method for low-dose-rate MOS device response prediction based on the linear dependence between positive oxide charge anneal and interface states build-up is presented and experimentally verified. A linear relationship is seen to exist between the build-up of slow interface states and oxide trapped hole annealing. The physical explanation of the correlation between the number of trapped holes annealed and the number of interface states generated can be given in both hydrogen and trapped hole conversion models on a phenomenological basis. It is suggested that there is a one-to-K/sub Oi/ relationship (where K/sub Oi/ is some phenomenological constant) between the number of trapped holes annealed and the number of interface states generated.< >
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ISSN:0018-9499
1558-1578
DOI:10.1109/23.273488