Ultra fast (<1 ns) electrical characterization of self-heating effect and its impact on hot carrier injection in 14nm FinFETs

We demonstrate electrical characterizations within sub-1 ns to investigate the self-heating effect (SHE) in 14 nm FinFETs, for the first time. Thanks to the extremely fast I-V measurement speed (~500 ps), the heat generation and dissipation process in the transistor channel are precisely captured. F...

Full description

Saved in:
Bibliographic Details
Published in2017 IEEE International Electron Devices Meeting (IEDM) pp. 39.2.1 - 39.2.4
Main Authors Yiming Qu, Xi Lin, Junkang Li, Ran Cheng, Xiao Yu, Zejie Zheng, Jiwu Lu, Bing Chen, Yi Zhao
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2017
Subjects
FinFETs
Human computer interaction
Parameter extraction
Transient analysis
Online AccessGet full text

Cover

More Information
Summary:We demonstrate electrical characterizations within sub-1 ns to investigate the self-heating effect (SHE) in 14 nm FinFETs, for the first time. Thanks to the extremely fast I-V measurement speed (~500 ps), the heat generation and dissipation process in the transistor channel are precisely captured. Furthermore, the unique correlation between channel temperature and drain current at different gate and drain biases is obtained. With this correlation, the transient and static channel temperatures could be extracted for devices with any working conditions and switching speeds. The impact of SHE on HCI degradation under real circuit stress is also investigated, showing that even under high frequency working conditions (GHz with random signals), SHE still has significant impact on HCI degradation in 14 nm FinFETs.
ISSN:2156-017X
DOI:10.1109/IEDM.2017.8268520